Skip to main content

Sensor Cooling & Dark Current Calculator

Estimate dark current at any temperature or find the temperature needed for a target dark current.

Dark current in silicon-based imaging sensors approximately halves for every 5–7 °C of cooling, following the rule I_d(T₂) = I_d(T₁) × 2^(−ΔT/T_d). This calculator works in two directions: forward mode predicts dark current and accumulated dark charge at a target operating temperature given the room-temperature rate and the sensor's halving constant; reverse mode finds the temperature required to reach a specified dark current level and suggests the appropriate cooling method — single- or multi-stage thermoelectric, liquid-cooled TE, or liquid nitrogen. Inputs accept room-temperature dark current in e⁻/pixel/s, integration time, and halving constant (T_d ≈ 5–7 °C for silicon CCD and CMOS sensors). The forward mode also generates a dark current table across standard temperature setpoints from +25 °C to −120 °C.

Forward: Temperature → Dark Current
Dark Current at Target Temperature
Dark current
0.0013e⁻/p/s
Dark charge
in 10 s
0.0135e⁻
Dark noise
0.1161e⁻ rms
Temperature drop
105.0°C
Number of halvings
17.500
Dark Current vs. Temperature
25 °C
250.0e⁻/p/s
0 °C
13.920e⁻/p/s
-20 °C
1.381e⁻/p/s
-40 °C
0.1370e⁻/p/s
-60 °C
0.0136e⁻/p/s
-80 °C
1.35e-3e⁻/p/s
-100 °C
1.34e-4e⁻/p/s
-120 °C
1.33e-5e⁻/p/s
Abridged Optics — Sensor Cooling Calculator v1.0I_d(T₂) = I_d(T₁) × 2^(−(T₁−T₂)/T_d). T_d ≈ 5–7 °C for silicon.

All information, equations, and calculations have been compiled and verified to the best of our ability. For mission-critical applications, we recommend independent verification of all values. If you find an error, please let us know.